Pure Si doped with trivalent impurities gives a p-type semiconductor
Majority carriers in a n-type semiconductor are holes
Minority carriers in a p-type semiconductor are electrons
The resistance of intrinsic semiconductor decreases with increase of temperature
Solution
p-type semiconductor are obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge).
Majority charge carriers-holes
Minority charge carriers-electrons
n-type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor $(\mathrm{Ge})$.
Majority charge carriers-electrons
The resistance of intrinsic semiconductors decreases with increase of temperature.