The hole and the free electron concentrations in a pure silicon at room temperature are given by $1.4 imes 10^{16} \mathrm{~m}^{-3}$ each under equilibrium. When it is doped with indium and the hole concentration is $\mathrm{n}_{\mathrm{h}}=4 imes 10^{22} \mathrm{~m}^{-3}$, the electron…

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The hole and the free electron concentrations in a pure silicon at room temperature are given by $1.4 	imes 10^{16} \mathrm{~m}^{-3}$ each under equilibrium. When it is doped with indium and the hole concentration is $\mathrm{n}_{\mathrm{h}}=4 	imes 10^{22} \mathrm{~m}^{-3}$, the electron concentration is

Aicharya · Accepted Answer

Here, $\mathrm{n}_{\mathrm{i}}=1.4 	imes 10^{16} \mathrm{~m}^{-3}$ $\begin{aligned} & \mathrm{n}_{\mathrm{h}}=4 	imes 10^{22} \mathrm{~m}^{-3} \ & \mathrm{n}_{\mathrm{i}}^2=\mathrm{n}_{\mathrm{h}} \mathrm{n}_{\mathrm{e}}\end{aligned}$ Electron concentration, $=\frac{\left(1.4 	imes 10^{16}ight)^2}{4 	imes 10^{22}}=0.49 	imes 10^{10} \mathrm{~m}^{-3}$

The hole and the free electron concentrations in a pure silicon at room temperature are given by $1.4 \times…

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