Pure silicon at 300 K has equal electron and hole concentration of $1.5 imes 10^{16} \mathrm{~m}^{-3}$. If the hole concentration increases to $3 imes 10^{22} \mathrm{~m}^{-3}$, then electron concentration in the silicon is

Question

Pure silicon at 300 K has equal electron and hole concentration of $1.5 	imes 10^{16} \mathrm{~m}^{-3}$. If the hole concentration increases to $3 	imes 10^{22} \mathrm{~m}^{-3}$, then electron concentration in the silicon is

Aicharya · Accepted Answer

$\mathrm{n}_{\mathrm{e}}=\mathrm{n}_{\mathrm{h}}=1.5 \times 10^{16} \mathrm{~m}^{-3}$ $\therefore \quad$ Number of intrinsic charge carriers, $\mathrm{n}_{\mathrm{i}}^2=\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}}=\left(1.5 \times 10^{16}\right)^2$
Again, $\begin{aligned} & \left(1.5 \times 10^{16}\right)^2=\mathrm{n}_{\mathrm{e}}\left(3 \times 10^{22}\right) \\ & \therefore \quad \mathrm{n}_{\mathrm{e}}=7.5 \times 10^9 \mathrm{~m}^{-3} \end{aligned}$

Pure silicon at 300 K has equal electron and hole concentration of $1.5 \times 10^{16} \mathrm{~m}^{-3}$. If…

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