In the reverse biasing of a p-n junction diode

In the reverse biasing of a p-n junction diode
  1. the width of the depletion layer decreases.
  2. the width of the depletion layer increases.
  3. the number of minority charge carriers increase.
  4. the number of majority charge carriers increase.

Solution

When a p-n junction is reverse biased: - Both the free electrons in the n-type semiconductor and the holes in the p-type semiconductor are attracted toward the battery. - The width of the depletion layer is increased, and no charge carriers meet. - Almost no current passes through the diode. - It acts like a very high ohm resistor or the same as an insulator.

Asked in: MHT CET 2023 (09 May Shift 2)

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