If $\mathrm{p}-\mathrm{n}$ junction diode is in forward bias then
If $\mathrm{p}-\mathrm{n}$ junction diode is in forward bias then
width of depletion layer increases
electric conduction is not possible at all
barrier voltage increases
width of depletion layer decreases
Solution
Potential drop across the junction decreases and diffusion of holes and electrons across the junction increases. It makes the width of the depletion layer smaller.