Consider a situation in which reverse biased current of a particular P - N junction increases when it is…

Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength ≤621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.
  1. 2 eV
  2. 4 eV
  3. 1 eV
  4. 0.5 eV

Solution

Band gap =hcλ0,
where λ0- threshold wavelength

Band gap =1242 ev-nm621 nm=2 eV

Asked in: JEE Main 2021 (22 Jul Shift 1)

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