Consider a n-type semiconductor in which $\mathrm{n}_{\mathrm{e}}$ and $\mathrm{n}_{\mathrm{h}}$ are number of electrons and holes, respectively. (A) Holes are minority carriers (B) The dopant is a pentavalent atom (C) $\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}}
eq…

Question

Consider a n-type semiconductor in which $\mathrm{n}_{\mathrm{e}}$ and $\mathrm{n}_{\mathrm{h}}$ are number of electrons and holes, respectively. (A) Holes are minority carriers (B) The dopant is a pentavalent atom (C) $\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} 
eq \mathrm{n}_{\mathrm{i}}^2$ (where $n_i$ is number of electrons or holes in semiconductor when it is intrinsic form) (D) $\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \geq \mathrm{n}_{\mathrm{i}}^2$ (E) The holes are not generated due to the donors Choose the correct answer from the options given below :

Aicharya · Accepted Answer

(A) n type semiconductor holes are minority carriers and $\mathrm{e}^{-}$are majority carriers
(B) Dopant are pentavalent atom.
(C) $\mathrm{n}_{\mathrm{e}} \cdot \mathrm{n}_{\mathrm{h}}=\mathrm{n}_{\mathrm{i}}^2$ for intrinsic semiconductor
(E) In $n$ type semiconductor primary source of holes generation are thermal excitation.

Consider a n-type semiconductor in which $\mathrm{n}_{\mathrm{e}}$ and $\mathrm{n}_{\mathrm{h}}$ are number…

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