heavily doping both \(p\) - and \(n\)-sides of a \(p-n\) junction diode
heavily doping the \(p\)-side and lightly doping the \(n\)-side of a \(p-n\) junction diode
lightly doping the \(p\)-side and heavily doping the \(n\)-side of a \(p-n\) junction diode
lightly doping both \(p\) - and \(n\)-sides of a \(p-n\) junction diode
Solution
A Zener diode is made by heavily doping both \(p\) and \(n\)-sides of the junction. Because of heavily doping, a very thin \(\left(\angle 10^{-6} \mathrm{~m}\right)\) depletion region is formed between the \(p\) and \(n\)-sides, and hence the electric field of the junction is extremely high even for a small reverse bias voltage.