A p-n photodiode is made of a material with a band gap of $2.0 \mathrm{eV}$. The minimum frequency of the…

A p-n photodiode is made of a material with a band gap of $2.0 \mathrm{eV}$. The minimum frequency of the radiation that can be absorbed by the material is nearly
  1. $10 \times 10^{14} \mathrm{~Hz}$
  2. $5 \times 10^{14} \mathrm{~Hz}$
  3. $1 \times 10^{14} \mathrm{~Hz}$
  4. $20 \times 10^{14} \mathrm{~Hz}$

Solution

$p-n$ photodiode is a semiconductor diode that produces a significant current when illuminated. It is reversed biased but is operated below the breakdown voltage. Energy of radiation $=$ band gap energy ie, $h v=2.0 \mathrm{eV}$ $\text {or } v=\frac{2.0 \times 1.6 \times 10^{-19}}{6.6 \times 10^{-34}} \approx 5 \times 10^{14} \mathrm{~Hz}$

Asked in: NEET 2008 (Screening)

Practice more Semiconductors questions on Aicharya